general purpose transistors pnp silicon maximum ratings rating symbol v alue unit collector?emitter voltage v ceo ? 45 vdc collector?base voltage v cbo ? 60 vdc emitter?base voltage v ebo ? 5.0 vdc collector current ? continuous i c ? 800 madc thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board, (1) p d 225 mw t a = 25c derate above 25c 1.8 mw/c thermal resistance, junction to ambient r ja 556 c/w total device dissipation p d 300 mw alumina substrate, (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t stg ?55 to +150 c electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min typ max unit off characteristics collector?emitter breakdown voltage (i c = ?10 madc, i b = 0 ) v (br)ceo ? 45 ? ? vdc collector?emitter breakdown voltage (i c = ?10 adc, v eb = 0 ) v (br)ces ? 60 ? ? vdc emitter?base breakdown voltage (i e = ?10 adc, i c = 0) v (br)ebo ? 5.0 ? ? vdc collector cutoff current i ces (v ce = ?45 vdc, i e = 0 ) ? ? ? 20 nadc (v ce = ?45 vdc, i b = 0 , t a = 150c) ? ? ? 10 adc emitter cutoff current (v eb = ? 4.0 vdc, i c = 0) i ebo ? ? ? 20 nadc 1. fr? 5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 2 emitter 3 collector 1 base sotC23 device marking shipping 3000/tape&reel BCW68GLT1 dg ordering information rohs product for packing code suffix "g", weight : 0.008g halogen free product for packing code suffix "h" . ? ? 2012- willas electronic corp. BCW68GLT1
electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min typ max unit on characteristics dc current gain h fe ? ( i c = ?10 madc, v ce = ?1.0 vdc ) 120 ? 400 ( i c = ?100 madc, v ce = ?1.0 vdc ) 160 ? ? ( i c = ?300 madc, v ce = ?1.0 vdc ) 60 ? ? collector?emitter saturation voltage v ce(sat) ? ? ? 1.5 vdc ( i c = ? 300 madc, i b = ?30 madc ) base?emitter saturation voltage v be(sat) ? ? ? 2.0 vdc ( i c = ? 500 madc, i b = ?50 madc ) sm smallCsignal characteristics current?gain ? bandwidth product f t 100 ? ? mhz (i c = ?20madc, v ce = ?10 vdc, f = 100 mhz) output capacitance c obo ? ?1 8p f (v cb = ? 10 vdc, i e = 0, f = 1.0 mhz) input capacitance c ibo ? ? 105 pf (v eb = ?0.5 vdc, i c = 0, f = 1.0 mhz) noise figure nf ? ? 10 db (v ce = ? 5.0 vdc, i c = ? 0.2 madc, r s = 1.0 k ? , f = 1.0 khz, bw = 200 hz) 2012- willas electronic corp. general purpose transistors BCW68GLT1
sot - 23 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 2012- willas electronic corp. general purpose transistors BCW68GLT1 dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20)
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